Sub-gap excited photoluminescence in III-V compound semiconductor heterostructures

被引：0
|
作者：
Kalem, S
Curtis, A
Hartmann, Q
Moser, B
Stillman, G
机构：
[1] Natl Res Inst Elect & Cryptol, TUBITAK, TR-41470 Kocaeli, Turkey
[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
[3] Epiworks Inc, Champaign, IL 61821 USA
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2000年 / 221卷 / 01期
关键词：
D O I：
10.1002/1521-3951(200009)221:1<517::AID-PSSB517>3.0.CO;2-M
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Photoluminescence (PL) above the excitation energy is observed in a single GaAs-InGaP quantum well (QW) and heterostructure as well as in a InP-GaAs superlattice (SL) and in strained layers. It is shown that sub-gap excitation (1.468 eV) of n-type delta-doped GaAs/GaInP quantum structure leads to an up-converted hot carrier PL emission with energy gains as high as 450 meV. The up-conversion energy in GaAs-InGaP heterostructures is 50 meV which is originated from the GaAs layer. In InP-GaAs SL, the sub-gap excitation results in a hot PL at 1.55 eV. It is also shown that the sub-gap excitation can be used to confirm the changes in band energies of a strained layer.
引用
收藏
页码：517 / 522
页数：6
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