Multi-layer enhancement to polysilicon surface-micromachining technology

被引：19

作者：

Sniegowski, JJ ^{[1
]}

Rodgers, MS ^{[1
]}

机构：

[1] Sandia Natl Labs, Intelligent Micromachine Dept, Albuquerque, NM 87185 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650527

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A multi-level polysilicon surface-micromachining technology consisting of 5 layers of polysilicon is presented. Surface topography and film mechanical stress are the major impediments encountered in the development of a multi-layer surface-micromachining process. However, excellent mechanical film characteristics have been obtained through the use of chemical-mechanical polishing for planarization of topography and by proper sequencing of film deposition with thermal anneals. Examples of operating microactuators, geared power-transfer mechanisms, and optical elements demonstrate the mechanical advantages of construction with 5 polysilicon layers.

引用

页码：903 / 906

页数：4

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