Single-domain epitaxial silicene on diboride thin films

被引：14

作者：

Fleurence, A. ^{[1
]}

Gill, T. G. ^{[1
,2
,3
]}

Friedlein, R. ^{[1
,7
]}

Sadowski, J. T. ^{[5
]}

Aoyagi, K. ^{[1
]}

Copel, M. ^{[6
]}

Tromp, R. M. ^{[6
]}

Hirjibehedin, C. F. ^{[2
,3
,4
]}

Yamada-Takamura, Y. ^{[1
]}

机构：

[1] JAIST, Sch Mat Sci, 1-1 Asahidai, Nomi, Ishikawa 9231292, Japan

[2] UCL, London Ctr Nanotechnol, London WC1H 0AH, England

[3] UCL, Dept Chem, London WC1H 0AJ, England

[4] UCL, Dept Phys & Astron, Mortimer St, London WC1E 6BT, England

[5] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA

[6] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[7] Meyer Burger Germany AG, BU MicroSyst, D-09337 Hohenstein Ernstt, Germany

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 15期

基金：

英国工程与自然科学研究理事会;

关键词：

Electronic properties;

D O I：

10.1063/1.4945370

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial silicene, which forms spontaneously on ZrB2(0001) thin films grown on Si(111) wafers, has a periodic stripe domain structure. By adsorbing additional Si atoms on this surface, we find that the domain boundaries vanish, and a single-domain silicene sheet can be prepared without altering its buckled honeycomb structure. The amount of Si required to induce this change suggests that the domain boundaries are made of a local distortion of the silicene honeycomb lattice. The realization of a single domain sheet with structural and electronic properties close to those of the original striped state demonstrates the high structural flexibility of silicene. (C) 2016 AIP Publishing LLC.

引用

页数：5

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