Stress Engineering using Si3N4 for stiction free release of SOI beams

被引：1

作者：

Gupta, Suman A. ^{[1
]}

Shenoy, Apoorva ^{[2
]}

Monisha ^{[2
]}

Uma, V ^{[2
]}

Vijayaraghavan, M. N. ^{[1
]}

Bhat, Navakanta ^{[1
,3
]}

机构：

[1] Indian Inst Sci, Ctr Nano Sci & Engn, Bangalore 560012, Karnataka, India

[2] Mt Carmel Coll, Bangalore, Karnataka, India

[3] IISc, Elect Commun Engn, Bangalore 560012, India

来源：

PHYSICS OF SEMICONDUCTOR DEVICES | 2014年

关键词：

fixed-fixed beam; buckling distance; yield; tensile stress SOL;

D O I：

10.1007/978-3-319-03002-9_123

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the effect of thin silicon nitride (Si3N4) induced tensile stress on the structural release of 200nm thick SOI beam, in the surface micro-machining process. A thin (20nm / 100nm) LPCVD grown Si3N4 is shown to significantly enhance the yield of released beam in wet release technique. This is especially prominent with increase in beam length, where the beams have higher tendency for stiction. We attribute this yield enhancement to the nitride induced tensile stress, as verified by buckling tendency and resonance frequency data obtained from optical profilometry and laser doppler vibrometry.

引用

页码：491 / 493

页数：3

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