Electric-field-induced mid-infrared birefringence of the double quantum wells

被引：0
|
作者：
Vinnichenko, M. Ya [1 ]
Babich, V. M. [1 ]
Balagula, R. M. [1 ]
Sofronov, A. N. [1 ]
Firsov, D. A. [1 ]
Vorobjev, L. E. [1 ]
机构：
[1] Peter The Great St Petersburg Polytech Univ, 29 Polytech Skaya Str, St Petersburg 195251, Russia
来源：
3RD INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2016) | 2016年 / 741卷
关键词：
D O I：
10.1088/1742-6596/741/1/012124
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Birefringence in double tunnel-coupled GaAs/AlGaAs quantum wells was studied in the mid-infrared spectral range close to the intersubband resonance. Phase-sensitive optical studies allowed us to deduce simultaneously the differences of the refraction index and absorption coefficient for the normal waves polarized in the plane of the structure and along the structure growth, including electric-field induced effects. The optical absorption data are in a good agreement with the direct optical transmission measurements.
引用
收藏
页数：4
相关论文
共 50 条
  • [41] Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells in the Mid-Infrared Region
    Utochkin, V. V.
    Fadeev, M. A.
    Krishtopenko, S. S.
    Rumyantsev, V. V.
    Aleshkin, V. Ya.
    Dubinov, A. A.
    Morozov, S. V.
    Semyagin, B. R.
    Putyato, M. A.
    Emelyanov, E. A.
    Preobrazhenskii, V. V.
    Gavrilenko, V. I.
    SEMICONDUCTORS, 2020, 54 (09) : 1119 - 1122
  • [42] Mid-infrared range Augerlaser, based on intersubband transitions of carriers in quantum wells
    Vorob'ev, L.E.
    Zegrya, G.G.
    Firsov, D.A.
    Izvestiya Akademii Nauk. Ser. Fizicheskaya, 2001, 65 (02): : 230 - 233
  • [43] Dependence of the carrier concentration on the current in mid-infrared injection lasers with quantum wells
    Vinnichenko, M. Ya.
    Vorobjev, L. E.
    Firsov, D. A.
    Mashko, M. O.
    Balagula, R. M.
    Belenky, G.
    Shterengas, L.
    Kipshidze, G.
    SEMICONDUCTORS, 2013, 47 (11) : 1513 - 1516
  • [44] Ge/SiGe Asymmetric Quantum Wells for Second Harmonic Generation in the Mid-Infrared
    Frigerio, Jacopo
    Ballabio, Andrea
    Ciano, Chiara
    Mancini, Andrea
    Baldassarre, Leonetta
    Allerbeck, Jonas
    Kuttruff, Joel
    Isella, Giovanni
    Brida, Daniele
    Virgilio, Michele
    Ortolani, Michele
    2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE & EUROPEAN QUANTUM ELECTRONICS CONFERENCE (CLEO/EUROPE-EQEC), 2019,
  • [45] Mid-infrared entangled photon generation in optimised asymmetric semiconductor quantum wells
    Razali, R.
    Valavanis, A.
    Cooper, J. D.
    Ikonic, Z.
    Indjin, D.
    Harrison, P.
    SUPERLATTICES AND MICROSTRUCTURES, 2016, 90 : 107 - 116
  • [46] ELECTRIC-FIELD-INDUCED INFRARED ABSORPTION AND RAMAN SCATTERING IN DIAMOND
    ANASTASSAKIS, E
    BURSTEIN, E
    PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (06): : 1952 - +
  • [47] Injection mid-infrared heterolasers based on intraband carrier transitions in quantum wells and quantum dots
    Vorobjev, LE
    Firsov, DA
    Shalygin, VA
    Tulupenko, VN
    Ledentsov, NN
    Ustinov, VM
    Alferov, ZI
    IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 2000, 64 (02): : 294 - 298
  • [48] Modelling of an intersubband quantum confined Stark effect in Ge quantum wells for mid-infrared photonics
    Barzaghi, A.
    Falcone, V
    Calcaterra, S.
    Marris-morini, D.
    Virgilio, M.
    Frigerio, J.
    OPTICS EXPRESS, 2022, 30 (26) : 46710 - 46721
  • [49] Two-colour mid-infrared absorption in InAs/GaSb type II and broken-gap quantum wells under gated electric field
    Wei, X. F.
    Liu, L. W.
    Li, L. L.
    Xu, W.
    SOLID STATE COMMUNICATIONS, 2012, 152 (18) : 1753 - 1756
  • [50] Superefficient electric-field-induced spin-orbit splitting in strained p-type quantum wells
    Gvozdic, DM
    Ekenberg, U
    EUROPHYSICS LETTERS, 2006, 73 (06): : 927 - 933
12345