Electric-field-induced mid-infrared birefringence of the double quantum wells

被引：0
|
作者：
Vinnichenko, M. Ya [1 ]
Babich, V. M. [1 ]
Balagula, R. M. [1 ]
Sofronov, A. N. [1 ]
Firsov, D. A. [1 ]
Vorobjev, L. E. [1 ]
机构：
[1] Peter The Great St Petersburg Polytech Univ, 29 Polytech Skaya Str, St Petersburg 195251, Russia
来源：
3RD INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2016) | 2016年 / 741卷
关键词：
D O I：
10.1088/1742-6596/741/1/012124
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Birefringence in double tunnel-coupled GaAs/AlGaAs quantum wells was studied in the mid-infrared spectral range close to the intersubband resonance. Phase-sensitive optical studies allowed us to deduce simultaneously the differences of the refraction index and absorption coefficient for the normal waves polarized in the plane of the structure and along the structure growth, including electric-field induced effects. The optical absorption data are in a good agreement with the direct optical transmission measurements.
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页数：4
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