Surface morphology of GaAs(001) grown by solid- and gas-source molecular beam epitaxy

被引：11
|
作者：
VanNostrand, JE
Chey, SJ
Cahill, DG
Botchkarev, AE
Morkoc, H
机构：
[1] UNIV ILLINOIS,DEPT MAT SCI & ENGN,URBANA,IL 61801
[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[3] UNIV ILLINOIS,DEPT ELECTR & COMP ENGN,URBANA,IL 61801
来源：
SURFACE SCIENCE | 1996年 / 346卷 / 1-3期
关键词：
gallium arsenide; growth; low index single crystal surfaces; molecular beam epitaxy; scanning tunneling microscopy; surface structure; morphology; roughness; and topography;
D O I：
10.1016/0039-6028(95)00939-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Scanning tunneling microscopy is used to characterize the surface of homoepitaxial GaAs(001) films deposited on GaAs(001) substrates miscut 0.2 degrees towards [110]. Films are grown using solid-source (As,) and gas-source (AsH3) arsenic at temperatures ranging from 500 to 650 degrees C. The surface morphology of GaAs(001) is found to be extremely sensitive to growth temperature - for both solid- and gas-source molecular beam epitaxially grown films. Further, the presence of arsenic hydrides (hydrogen) reduces the surface roughness in the multilayer growth mode.
引用
收藏
页码：136 / 144
页数：9
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