Surface morphology of GaAs(001) grown by solid- and gas-source molecular beam epitaxy

被引：11
|
作者：
VanNostrand, JE
Chey, SJ
Cahill, DG
Botchkarev, AE
Morkoc, H
机构：
[1] UNIV ILLINOIS,DEPT MAT SCI & ENGN,URBANA,IL 61801
[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[3] UNIV ILLINOIS,DEPT ELECTR & COMP ENGN,URBANA,IL 61801
来源：
SURFACE SCIENCE | 1996年 / 346卷 / 1-3期
关键词：
gallium arsenide; growth; low index single crystal surfaces; molecular beam epitaxy; scanning tunneling microscopy; surface structure; morphology; roughness; and topography;
D O I：
10.1016/0039-6028(95)00939-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Scanning tunneling microscopy is used to characterize the surface of homoepitaxial GaAs(001) films deposited on GaAs(001) substrates miscut 0.2 degrees towards [110]. Films are grown using solid-source (As,) and gas-source (AsH3) arsenic at temperatures ranging from 500 to 650 degrees C. The surface morphology of GaAs(001) is found to be extremely sensitive to growth temperature - for both solid- and gas-source molecular beam epitaxially grown films. Further, the presence of arsenic hydrides (hydrogen) reduces the surface roughness in the multilayer growth mode.
引用
收藏
页码：136 / 144
页数：9
相关论文
共 50 条
  • [41] INSITU DETERMINATION OF PHOSPHORUS COMPOSITION IN GAAS1-XPX GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
    HOU, HQ
    LIANG, BW
    CHIN, TP
    TU, CW
    APPLIED PHYSICS LETTERS, 1991, 59 (03) : 292 - 294
  • [42] CHARACTERIZATION OF GAAS/GAASP STRAINED MULTIPLE-QUANTUM WELLS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
    HOU, HQ
    TU, CW
    SHAN, W
    HWANG, SJ
    SONG, JJ
    CHU, SNG
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 854 - 856
  • [43] Size quantization in InAs/GaAs self-assembled quantum dots grown by gas-source molecular beam epitaxy
    Ren, HW
    Nishi, K
    Sugou, S
    Masumoto, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3B): : 1548 - 1551
  • [44] CHARACTERIZATION OF HIGH-QUALITY GAINP/GAAS SUPERLATTICES GROWN ON GAAS AND SI SUBSTRATES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
    JELEN, C
    SLIVKEN, S
    HE, XG
    RAZEGHI, M
    SHASTRY, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 1113 - 1115
  • [45] CRYSTALLINE DEFECTS IN ZNSE LAYERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
    ENDOH, Y
    TANIMURA, J
    IMAIZUMI, M
    SUITA, M
    OHTSUKA, K
    ISU, T
    NUNOSHITA, M
    JOURNAL OF CRYSTAL GROWTH, 1995, 154 (1-2) : 41 - 46
  • [46] Dynamic changes in reflectance anisotropy from the Si(001) surface during gas-source molecular-beam epitaxy
    Zhang, J
    Taylor, AG
    Lees, AK
    Fernandez, JM
    Joyce, BA
    Raisbeck, D
    Shukla, N
    Pemble, ME
    PHYSICAL REVIEW B, 1996, 53 (15): : 10107 - 10115
  • [47] Relationship between self-organization and size of InAs islands on InP(001) grown by gas-source molecular beam epitaxy
    Appl Phys Lett, 13 (1850):
  • [48] Gas-source molecular beam epitaxy of SiGe virtual substrates: II. Strain relaxation and surface morphology
    Hartmann, JM
    Gallas, B
    Zhang, J
    Harris, JJ
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (04) : 370 - 377
  • [49] Infrared reflectivity spectra of gas-source molecular beam epitaxy grown dilute InNxAs1-x/InP (001)
    Talwar, Devki N.
    Yang, Tzuen-Rong
    Lin, Hao Hsiung
    Feng, Zhe Chuan
    APPLIED PHYSICS LETTERS, 2013, 102 (05)
  • [50] SURFACE-MORPHOLOGY OF GAAS GROWN BY GAS-SOURCE MBE USING TRIMETHYLGALLIUM AND ARSENIC
    ISHIKAWA, H
    KONDO, K
    SASA, S
    TANAKA, H
    HIYAMIZU, S
    JOURNAL OF CRYSTAL GROWTH, 1986, 76 (02) : 521 - 524
12345