Linearity and RF Power Handling of Capacitive RF MEMS Switches

被引：1

作者：

Molinero, David ^{[1
]}

Aghaei, Samira ^{[1
]}

Morris, Art ^{[1
]}

Cunningham, Shawn ^{[1
]}

机构：

[1] Wispry Inc, Irvine, CA 92618 USA

来源：

2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2019年

关键词：

Linearity; RF Power; RF MEMS; Capacitive; Switches; Power Handling;

D O I：

10.1109/mwsym.2019.8700984

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Linearity characteristics of capacitive tuners are an important issue for today's cellphone market. Antenna tuners have become necessary in mobile devices due to the RF spectrum expansion in the low frequency range. Capacitive tuners connected directly to the antenna change the RF voltage/current pattern and are thus exposed to large voltage swings, especially in the isolation state (minimum capacitance). In this paper, we analyze the effects of high RF power on capacitive MEMS switches. Measurements up to 6.4W were performed in the isolation state (minimum capacitance) showing the robustness of this technology under large RF power or voltage swings. Measurements demonstrated IP3 of +125dBm for a 45MHz tone spacing and third harmonic of -136dBm at +38dm of incident power.

引用

页码：793 / 796

页数：4

共 50 条

[41] Simulations of Impulsive Dynamics in RF MEMS Capacitive Switches
Venkattraman, Ayyaswamy
Alexeenko, Alina
[J]. PROCEEDINGS OF THE ASME INTERNATIONAL MECHANICAL ENGINEERING CONGRESS AND EXPOSITION, 2011, VOL 11, 2012, : 153 - 158
[42] Identifying degradation mechanisms in RF MEMS capacitive switches
Herfst, R. W.
Steeneken, P. G.
Schmitz, J.
[J]. MEMS 2008: 21ST IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST, 2008, : 168 - +
[43] Using MEMS capacitive switches in tunable RF amplifiers
Danson, John
Plett, Calvin
Tait, Niall
[J]. EURASIP JOURNAL ON WIRELESS COMMUNICATIONS AND NETWORKING, 2006, 2006 (1)
[44] Charging in Dielectricless Capacitive RF-MEMS Switches
Mardivirin, David
Pothier, Arnaud
Crunteanu, Aurelian
Vialle, Bastien
Blondy, Pierre
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2009, 57 (01) : 231 - 236
[45] Failure mechanisms of DC and capacitive RF MEMS switches
Patton, Steven T.
Zabinski, Jeffrey S.
[J]. RELIABILITY, PACKAGING, TESTING, AND CHARACTERIZATION OF MEMS/ MOEMS V, 2006, 6111
[46] Modeling of dielectric charging in RF MEMS capacitive switches
Sumant, Prasad S.
CangellariS, Andreas C.
Aluru, Narayana R.
[J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2007, 49 (12) : 3188 - 3192
[47] Circuital Modelling of Shunt Capacitive RF MEMS Switches
Bartolucci, Giancarlo
Marcelli, Romolo
Catoni, Simone
Margesin, Benno
Giacomozzi, Flavio
Lucibello, Andrea
Mulloni, Viviana
Farinelli, Paola
[J]. 2008 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2008, : 362 - +
[48] Acceleration of dielectric charging in RF MEMS capacitive switches
Yuan, Xiaobin
Peng, Zhen
Hwang, James C. M.
Forehand, David
Goldsmith, Charles L.
[J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2006, 6 (04) : 556 - 563
[49] Understanding and improving longevity in RF MEMS capacitive switches
Goldsmith, Chuck
Forehand, David
Scarbrough, Derek
Peng, Zheng
Palego, Cris
Hwang, James
Clevenger, Jason
[J]. RELIABILITY, PACKAGING, TESTING, AND CHARACTERIZATION OF MEMS/MOEMS VII, 2008, 6884
[50] The static behavior of RF MEMS capacitive switches in contact
Suy, H. M. R.
Herfst, R. W.
Steeneken, P. C.
Stulemeijer, J.
Bielen, J. A.
[J]. NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS: MICROSYSTEMS, PHOTONICS, SENSORS, FLUIDICS, MODELING, AND SIMULATION, 2008, : 517 - +

← 1 2 3 4 5 →