The static behavior of RF MEMS capacitive switches in contact

被引：0
|
作者：
Suy, H. M. R. [1 ]
Herfst, R. W. [1 ]
Steeneken, P. C. [1 ]
Stulemeijer, J.
Bielen, J. A.
机构：
[1] NXP Semicond Res, High Tech Campus 37, NL-5656 AE Eindhoven, Netherlands
来源：
NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS: MICROSYSTEMS, PHOTONICS, SENSORS, FLUIDICS, MODELING, AND SIMULATION | 2008年
关键词：
MEMS switches; RF MEMS; contact; contact model; surface roughness;
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A method is presented in which surface topography characterization is combined with the electrical measurement of the contact mechanics under electrostatic loading. Contact characteristics such as the surface separation versus the applied pressure, and the applied pressure versus the contact area, are derived. Based on these results, a contact model is validated. In combination with a compact model of a capacitive switch, this contact model is used to predict the contact behavior of different switch designs.
引用
收藏
页码：517 / +
页数：2
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