Electronic and annealing properties of a metastable He-ion implantation induced defect in GaAs (reprinted from Nuclear Instruments and Methods in Physics Research, vol 106, pg 323-327, 1995)

被引：0
|
作者：
Auret, FD [1 ]
Goodman, SA [1 ]
Erasmus, RM [1 ]
Meyer, WE [1 ]
Myburg, G [1 ]
机构：
[1] UNIV PRETORIA,DEPT PHYS,ZA-0002 PRETORIA,SOUTH AFRICA
来源：
ION BEAM MODIFICATION OF MATERIALS | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：323 / 327
页数：5
相关论文
共 50 条
  • [1] Electronic and annealing properties of a metastable He-ion implantation induced defect in GaAs
    Auret, FD
    Goodman, SA
    Erasmus, RM
    Meyer, WE
    Myburg, G
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 106 (1-4): : 323 - 327
  • [2] Silicon implant annealing kinetics in GaAs (reprinted from Nuclear Instruments and Methods in Physics Research, vol 106, pg 318, 1995)
    Gwilliam, R
    Apiwatwaja, R
    Wilson, R
    Sealy, BJ
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 318 - 322
  • [3] Ion implantation damage of InP and InGaAs (reprinted from Nuclear Instruments and Methods in Physics Research, vol 106, pg 308-312, 1995)
    Akano, UG
    Mitchell, IV
    Shepherd, R
    Miner, CJ
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 308 - 312
  • [4] The substitutionality of hafnium in sapphire by ion implantation and low temperature annealing (Reprinted from Nuclear Instruments and Methods in Physics B, vol 106, pg 602-605, 1995)
    Marques, JG
    Melo, AA
    Soares, JC
    Alves, E
    daSilva, MF
    Freitag, K
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 602 - 605
  • [5] Synthesis of unattainable ion implantation profiles - 'Pseudo-implantation' (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 646-650, 1995)
    Brown, IG
    Anders, A
    Anders, S
    Castro, RA
    Dickinson, MR
    MacGill, RA
    Wang, Z
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 646 - 650
  • [6] An investigation of dopant gases in plasma immersion ion implantation (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 636-640, 1995)
    Qin, S
    Bernstein, JD
    Zhao, ZF
    Chan, C
    Shao, JQ
    Denholm, S
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 636 - 640
  • [7] Metastable alloys synthesised by ion mixing and thermodynamic and kinetic modelling (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 17-22, 1995)
    Liu, BX
    Zhang, ZJ
    Jin, O
    Pan, F
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 17 - 22
  • [8] Ion beam synthesis of planar opto-electronic devices (reprinted from Nuclear Instruments and Methods in Physics Research, vol 106, pg 393-399, 1995)
    Polman, A
    Snoeks, E
    vandenHoven, GN
    Brongersma, ML
    Serna, R
    Shin, JH
    Kik, P
    Radius, E
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 393 - 399
  • [9] Silicon on an insulator produced by helium implantation and oxidation (reprinted from Nuclear Instruments and Methods in Physics Research, vol 106, pg 415-418, 1995)
    Raineri, V
    Campisano, SU
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 415 - 418
  • [10] Germanium implantation into amorphous silicon films (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 257-261, 1995)
    Ershov, AV
    Ezhevskii, AA
    Khokhlov, AF
    Khokhlov, DA
    Mashin, AI
    Mashin, NI
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 257 - 261
12345