Apparatus for Measurement of Thermal Impedance of High-Power Light-Emitting Diodes and LED Assemblies

被引:11
|
作者
Smirnov, Vitaliy Ivanovich [1 ]
Sergeev, Viacheslav Anreevich [2 ]
Gavrikov, Andrey Anatolievich [2 ]
机构
[1] Ulyanovsk State Tech Univ, Ulyanovsk 432027, Russia
[2] Russian Acad Sci, Inst Radioengn & Elect, Ulyanovsk Branch, Ulyanovsk 432011, Russia
关键词
Light-emitting diodes (LEDs); LED assemblies; LED matrix; thermal impedance; thermal resistance;
D O I
10.1109/TED.2016.2556583
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Measurement results of thermal impedance of powerful light-emitting diode assemblies are described. The measurements were performed with the help of a frequency method that involves heating the object under test by varying power harmonically. A pulse sequence of heating current, with the pulse length varying harmonically, is passed through the device under test. The p-n junction temperature is determined through measuring a temperature-sensitive parameter, which is forward voltage drop on the p-n junction between heating pulses at low measuring current. The first harmonic of the p-n junction temperature is determined by the discrete Fourier transform, which allows determination of thermal impedance module and phase at the modulation frequency of heating power. Analysis of the dependence of thermal impedance on modulation frequency allows determination of thermal impedance components corresponding to the structural elements of the object under test.
引用
收藏
页码:2431 / 2435
页数:5
相关论文
共 50 条
  • [41] Microplasma breakdown of InGaN/GaN heterostructures in high-power light-emitting diodes
    Veleschuk, V. P.
    Vlasenko, A. I.
    Kisselyuk, M. P.
    Lyashenko, O. V.
    JOURNAL OF APPLIED SPECTROSCOPY, 2013, 80 (01) : 117 - 123
  • [42] Theoretical Modeling of Luminous Efficacy for High-Power White Light-Emitting Diodes
    陶雪慧
    杨勇
    Chinese Physics Letters, 2017, (03) : 127 - 131
  • [43] An assessment of high-power light-emitting diodes for high frame rate schlieren imaging
    Willert, Christian E.
    Mitchell, Daniel M.
    Soria, Julio
    EXPERIMENTS IN FLUIDS, 2012, 53 (02) : 413 - 421
  • [44] GaInN/GaN growth optimization for high-power green light-emitting diodes
    Wetzel, C
    Salagaj, T
    Detchprohm, T
    Li, P
    Nelson, JS
    APPLIED PHYSICS LETTERS, 2004, 85 (06) : 866 - 868
  • [45] STUDY OF OPTICAL STABILITY FOR VERTICAL HIGH-POWER WHITE LIGHT-EMITTING DIODES
    Zhang, Linzhao
    Ding, Wen
    Yun, Feng
    Zheng, Min
    Xia, Deyang
    Li, Qiang
    Guo, Maofeng
    Zhang, Ye
    Liu, Shuo
    Hou, Xun
    INTERNATIONAL CONFERENCE ON PHOTONICS AND OPTICAL ENGINEERING (ICPOE 2014), 2015, 9449
  • [46] Microplasma breakdown of InGaN/GaN heterostructures in high-power light-emitting diodes
    V. P. Veleschuk
    A. I. Vlasenko
    M. P. Kisselyuk
    O. V. Lyashenko
    Journal of Applied Spectroscopy, 2013, 80 : 117 - 123
  • [47] High-power AlGaInP light-emitting diodes with patterned copper substrates by electroplating
    Horng, RH
    Lee, CE
    Kung, CY
    Huang, SH
    Wuu, DS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (4B): : L576 - L578
  • [48] High-power GaN light-emitting diodes with patterned copper substrates by electroplating
    Horng, RH
    Lee, CE
    Hsu, SC
    Huang, SH
    Wu, CC
    Kung, CY
    Wuu, DS
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (12): : 2786 - 2790
  • [49] An assessment of high-power light-emitting diodes for high frame rate schlieren imaging
    Christian E. Willert
    Daniel M. Mitchell
    Julio Soria
    Experiments in Fluids, 2012, 53 : 413 - 421
  • [50] Engineering method for predicting junction temperatures of high-power light-emitting diodes
    Luo, X.
    Mao, Z.
    Yang, J.
    Liu, S.
    IET OPTOELECTRONICS, 2012, 6 (05) : 230 - 236