High-power AlGaInP light-emitting diodes with patterned copper substrates by electroplating

被引：8

作者：

Horng, RH ^{[1
]}

Lee, CE

Kung, CY

Huang, SH

Wuu, DS

机构：

[1] Natl Chung Hsing Univ, Inst Precis Engn, Taichung 402, Taiwan

[2] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 402, Taiwan

[3] Natl Chung Hsing Univ, Dept Mat Engn, Taichung 402, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 4B期

关键词：

AlGaInP; copper substrate; electroplating; light emitting diodes (LEDs);

D O I：

10.1143/JJAP.43.L576

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

(LEDs) to improve both the heat dissipation and substrate light-absorbing problems encountered in conventional A1GaInP/ GaAs LED samples. Especially, this LED samples can be accomplished without additional dicing process. It was found that the peak-spectral wavelength of the AlGaInP LED with an electroplated copper substrate exhibited only about 3 nm shift at 400mA, corresponding to a similar to30degreesC rising in the junction temperature. However, the junction temperature increased to 110degreesC easily for the AlGaInP/GaAs LED sample under a current injection of 400 mA. This indicates that the joule heating is less pronounced for the high-power AlGaInP/mirror/Cu LED sample where the metallic substrate provides a good heat sink.

引用

页码：L576 / L578

页数：3

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