High-power AlGaInP light-emitting diodes with patterned copper substrates by electroplating

被引：8
|
作者：
Horng, RH [1 ]
Lee, CE
Kung, CY
Huang, SH
Wuu, DS
机构：
[1] Natl Chung Hsing Univ, Inst Precis Engn, Taichung 402, Taiwan
[2] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 402, Taiwan
[3] Natl Chung Hsing Univ, Dept Mat Engn, Taichung 402, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 4B期
关键词：
AlGaInP; copper substrate; electroplating; light emitting diodes (LEDs);
D O I：
10.1143/JJAP.43.L576
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
(LEDs) to improve both the heat dissipation and substrate light-absorbing problems encountered in conventional A1GaInP/ GaAs LED samples. Especially, this LED samples can be accomplished without additional dicing process. It was found that the peak-spectral wavelength of the AlGaInP LED with an electroplated copper substrate exhibited only about 3 nm shift at 400mA, corresponding to a similar to30degreesC rising in the junction temperature. However, the junction temperature increased to 110degreesC easily for the AlGaInP/GaAs LED sample under a current injection of 400 mA. This indicates that the joule heating is less pronounced for the high-power AlGaInP/mirror/Cu LED sample where the metallic substrate provides a good heat sink.
引用
收藏
页码：L576 / L578
页数：3
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