High brightness AlGaInP light-emitting diodes

被引：158
|
作者：
Streubel, K [1 ]
Linder, N [1 ]
Wirth, R [1 ]
Jaeger, A [1 ]
机构：
[1] Osram Opto Semicond, D-93049 Regensburg, Germany
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2002年 / 8卷 / 02期
关键词：
AlGaInP; light-emitting diodes; light extraction;
D O I：
10.1109/2944.999187
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reviews the recent progress of AlGaInP high brightness light-emitting diodes. After the discussion of some basic material properties and the general problem of light extraction we will discuss several approaches of high efficiency devices.
引用
收藏
页码：321 / 332
页数：12
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