Reliability properties of low-voltage ferroelectric capacitors and memory arrays

We report on the reliability properties of ferroelectric capacitors and memory arrays embedded in a 130-mn CMOS logic process with 5LM Cu/FSG. Low voltage (<1.5 V) operation is enabled by the 70-mn thick MOCVD PZT rerroelectric films. Data loss resulting from high temperature bakes is primarily caused by the imprint effect, which shows similar to1.5 eV time-to-fail activation energy. Excellent bit endurance properties are observed on fully packaged memory arrays, with no degradation up to 10(13) write/read polarization switching cycles. Retention measured after 10(12) switching cycles demonstrates no degradation relative to arrays with minimal cycling.