A voltage-dependent switching-time (VDST) model of ferroelectric capacitors for low-voltage FeRAM circuits

被引：6
|
作者：
Chow, J [1 ]
Sheikholeslami, A [1 ]
Cross, JS [1 ]
Masui, S [1 ]
机构：
[1] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON, Canada
来源：
2004 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS | 2004年
关键词：
D O I：
10.1109/VLSIC.2004.1346646
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The time required to switch a ferroelectric capacitor from one binary state to the other is strongly related to the magnitude of the applied voltage, especially at voltages well below the power supply. This paper presents a Verilog-A model that accurately predicts the voltage-dependent switching dynamics of various FeRAM technologies. Spectre simulations of low-voltage FeRAM circuits implemented in a 0.35mum CMOS/PZT testchip are in full agreement with our measurement results.
引用
收藏
页码：448 / 449
页数：2
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