Reliability properties of low voltage PZT ferroelectric capacitors and Arrays

被引：6

作者：

Rodriguez, J ^{[1
]}

Remack, K ^{[1
]}

Boku, K ^{[1
]}

Udayakumar, KR ^{[1
]}

Aggarwal, S ^{[1
]}

Summerfelt, S ^{[1
]}

Moise, T ^{[1
]}

McAdams, H ^{[1
]}

McPherson, J ^{[1
]}

Bailey, R ^{[1
]}

Depner, M ^{[1
]}

Fox, G ^{[1
]}

机构：

[1] Texas Instruments Inc, Dallas, TX 75243 USA

来源：

2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS | 2004年

关键词：

D O I：

10.1109/RELPHY.2004.1315324

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the reliability properties of a high-density ferroelectric memory based on a 70nm thick MOCVD PZT process technology. We observe that the polycrystalline texture plays an important role in the electrical and reliability properties of these thin films. Data retention loss is primarily due to the imprint effect, which shows a 1.5eV "Time-to-Fail" activation energy. Good correlation is observed between stand alone test capacitors and memory arrays integrated into a 130nm, 5LM, Cu/FSG logic CMOS process. Excellent bit endurance properties are observed on fully packaged memory arrays, with no degradation up to 10(13) read/write cycles.

引用

页码：200 / 208

页数：9

共 50 条

[1] Reliability properties of low-voltage ferroelectric capacitors and memory arrays
Rodriguez, JA
Remack, K
Boku, K
Udayakumar, KR
Aggarwal, S
Summerfelt, SR
Celii, FG
Martin, S
Hall, L
Taylor, K
Moise, T
McAdams, H
McPherson, J
Bailey, R
Fox, G
Depner, M
[J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2004, 4 (03) : 436 - 449
[2] Ultra-thin PZT ferroelectric capacitors enable low-voltage operation
不详
[J]. INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS, 1997, 27 (03): : 205 - 205
[3] Temperature and voltage dependence in PZT ferroelectric thin film capacitors
Masuda, Y
Fujita, S
Nishida, T
[J]. FERROELECTRICS, 1999, 232 (1-4) : 939 - 944
[4] Comparison of properties of Pt/PZT/Pt and Ru/PZT/Pt ferroelectric capacitors
Jia, Z
Ren, TL
Liu, TZ
Hu, H
Zhang, ZG
Xie, D
Liu, LT
[J]. CHINESE PHYSICS LETTERS, 2006, 23 (04) : 1042 - 1045
[5] Compact model for PZT ferroelectric capacitors with voltage dependent switching behavior
Wang, Chien-Wei
Ku, Hansol
Chiu, Cheng Yan
De, Sourav
Qiu, Bo-Han
Shin, Changhwan
Lu, Darsen
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 35 (05)
[6] Comparison of properties of Pt/PZT/Pt and Ru/PZT/Pt ferroelectric capacitors
Institute of Microelectronics, Tsinghua University, Beijing 100084, China
[J]. Chin. Phys. Lett., 2006, 4 (1042-1045):
[7] Influence of the ferroelectric domain structure and switching properties on the endurance of PZT ferroelectric capacitors
Wouters, DJ
Maes, HE
[J]. MICROELECTRONICS AND RELIABILITY, 1996, 36 (11-12): : 1763 - 1766
[8] MATERIALS INTERACTIONS IN THE INTEGRATION OF PZT FERROELECTRIC CAPACITORS
JONES, RE
MANIAR, PD
CAMPBELL, AC
MOAZZAMI, R
DUPUIE, JL
GREGORY, RB
KOTTKE, ML
BOZACK, ML
WILLIAMS, JR
FERRERO, JM
[J]. INTEGRATED FERROELECTRICS, 1995, 6 (1-4) : 81 - 92
[9] Effect of bottom electrode system on ferroelectric properties of sputter deposited PZT capacitors
Hong, K
Yu, YS
Lee, SK
[J]. FERROELECTRIC THIN FILMS VII, 1999, 541 : 107 - 112
[10] Relationship between orientation and ferroelectric properties in Ir/PZT/Ir epitaxial capacitors
Okuwada, K
Ishida, J
Yamada, T
Sawabe, A
Saito, K
[J]. ISAF 2002: PROCEEDINGS OF THE 13TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, 2002, : 115 - 118

← 1 2 3 4 5 →