Reliability properties of low voltage PZT ferroelectric capacitors and Arrays

被引：6

作者：

Rodriguez, J ^{[1
]}

Remack, K ^{[1
]}

Boku, K ^{[1
]}

Udayakumar, KR ^{[1
]}

Aggarwal, S ^{[1
]}

Summerfelt, S ^{[1
]}

Moise, T ^{[1
]}

McAdams, H ^{[1
]}

McPherson, J ^{[1
]}

Bailey, R ^{[1
]}

Depner, M ^{[1
]}

Fox, G ^{[1
]}

机构：

[1] Texas Instruments Inc, Dallas, TX 75243 USA

来源：

2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS | 2004年

关键词：

D O I：

10.1109/RELPHY.2004.1315324

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the reliability properties of a high-density ferroelectric memory based on a 70nm thick MOCVD PZT process technology. We observe that the polycrystalline texture plays an important role in the electrical and reliability properties of these thin films. Data retention loss is primarily due to the imprint effect, which shows a 1.5eV "Time-to-Fail" activation energy. Good correlation is observed between stand alone test capacitors and memory arrays integrated into a 130nm, 5LM, Cu/FSG logic CMOS process. Excellent bit endurance properties are observed on fully packaged memory arrays, with no degradation up to 10(13) read/write cycles.

引用

页码：200 / 208

页数：9

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