AlN/GaN metal-insulator-semiconductor high-electron-mobility transistor with thermal atomic layer deposition AlN gate dielectric

In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) is proposed. This technique features the AlN thin film grown by thermal atomic layer deposition (ALD) at 360 degrees C without plasma enhancement. A 10 nm AIN thin film serving as gate dielectric and passivation layer in the access region was grown. Compared with the Schottky gate AlN/GaN HEMT (SG-HEMT), the fabricated thermal ALD-grown AlN MIS-HEMTexhibits enhanced integral on/integral off ratio, reduction of gate leakage by 5 orders of magnitude at a bias of 5V, and suppressed current collapse degradation. (C) 2018 The Japan Society of Applied Physics