AlGaN/GaN heterostructure metal-insulator-semiconductor high-electron-mobility transistors with Si3N4 gate insulator

被引：53

作者：

Ochiai, M ^{[1
]}

Akita, M ^{[1
]}

Ohno, Y ^{[1
]}

Kishimoto, S ^{[1
]}

Maezawa, K ^{[1
]}

Mizutani, T ^{[1
]}

机构：

[1] Nagoya Univ, Dept Quantum Engn, Chigusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 4B期

关键词：

AlGaN/GaN HEMT; MIS-HEMTs; Si3N4 gate insulator; gate leakage current; low-frequency noise; current collapse;

D O I：

10.1143/JJAP.42.2278

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlGaN/GaN metal-insulator- semiconductor high-electron-mobility transistors (MIS-HEMTs) using Si3N4 film as a gate insulator have been successfully fabricated. The gate leakage current decreased by about three orders of magnitude compared to that of the conventional AlGaN/GaN HEMTs without the Si3N4 gate insulator. The low-frequency noise of the MIS-HEMTs was smaller than that of the conventional HEMTs. Current collapse has also been suppressed in the MIS-HEMTs.

引用

页码：2278 / 2280

页数：3

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