Device Architectures for High-speed SiGe HBTs

被引：32

作者：

Ruecker, H. ^{[1
]}

Heinemann, B. ^{[1
]}

机构：

[1] IHP Leibniz Inst Innovat Mikroelekt, Technol Pk 25, D-15236 Frankfurt, Germany

来源：

2019 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS 2019) | 2019年

关键词：

Si/SiGe HBT; BiCMOS; millimeter-wave; GHZ;

D O I：

10.1109/bcicts45179.2019.8972757

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews recent developments in process technology of high-speed SiGe HBTs at IHP. Two device concepts, one with selective epitaxial growth and one with non-selective epitaxial growth of the base, are analyzed with respect to their impact on radio frequency performance. Both device architectures take advantage of a low-resistive base link formed by selective epitaxial growth of extrinsic base regions after emitter structuring. As an intermediate result of the European project TARANTO, HBTs with f(T) values of 470 GHz and f(MAX) values of 610 GHz are demonstrated in a 130 nm BiCMOS process.

引用

页数：7

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