High Quality Single-Crystalline Ge-Rich SiGe on Insulator Structures by Si-Doping Controlled Rapid Melting Growth

Ge-rich SiGe-on-insulator (SGOI) is required for high speed transistors. We investigated the effects of Si doping on the growth characteristics of SGOI produced by rapid melting growth. The aggregation of Ge, observed for pure Ge wide stripes (>5 mu m), can be suppressed by Si doping. Si doping causes rotational growth of SiGe stripes, but this can be controlled using lower Si doping concentrations and growth temperatures. Single-crystalline Ge-rich SGOI (Ge concentration > 96%) that is wide enough (15 mu m) for device fabrication is thus produced. Transmission electron microscopy reveals that the Ge-rich SGOI does not contain dislocations or stacking faults. (C) 2010 The Japan Society of Applied Physics