High Quality Single-Crystal Laterally Graded SiGe on Insulator by Rapid Melt Growth

被引：10

作者：

Koh, H. -Y. Serene ^{[1
]}

Chen, Shu-Lu ^{[1
]}

Griffin, Peter B. ^{[1
]}

Plummer, James D. ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2010年 / 13卷 / 08期

关键词：

energy gap; germanium alloys; lattice constants; liquid phase epitaxial growth; semiconductor growth; silicon alloys; silicon compounds; solubility; LIQUID-PHASE EPITAXY; ON-INSULATOR; GE; SUBSTRATE; SILICON; SOLIDIFICATION; SEMICONDUCTOR; FABRICATION;

D O I：

10.1149/1.3436665

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We grew SiGe on insulator (SGOI) by the rapid melt growth (RMG) technique. The RMG method combines Si-seeded, defect-necked melt growth with liquid encapsulation by self-aligned silicon dioxide microcrucibles. We obtained high quality, single-crystal, and (100)-oriented laterally graded SGOI structures with this simple and robust process, demonstrating that RMG can be applied to alloys with large miscibility gaps. Our process opens the possibility of building Si-compatible devices that require a smooth lateral variation in bandgap or lattice constant. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3436665] All rights reserved.

引用

页码：H281 / H283

页数：3

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