Effect of Temperature on Performance of HZO-Based FD-SOI NCFET

In this study, the temperature effect on Zirconium doped HfO2 (HZO) based Metal-Ferroelectric-MetalInsulator-Semiconductor (MFMIS) type Fully depleted Silicon on Insulator (FDSOI) negative capacitance field effect transistor (NCFET) has been investigated in ATLAS TCAD. The MIS device simulation has been performed in TCAD and its gate charge (Q(G)) has been extracted. The extracted charge is further utilized in 1D Landau-Khalatnikov (LK) model to find the voltage across ferro-electric (V-FE), that subsequently used to add the effect of HZO analytically to the device. Performance parameters like minimum sub-threshold swing (min. SS), off current (I-off) and transconductance (g(m)) with variation of temperature (280 K - 340 K with step 20 K) have been predicted. The performance variation of device with temperature has been explained using 1D LK theory.