Effect of Temperature on Performance of HZO-Based FD-SOI NCFET

被引：0

作者：

Seshu, Vullakula Rama ^{[1
]}

Shaik, Rameez Raja ^{[1
]}

Pradhan, K. P. ^{[1
]}

机构：

[1] IIITDM Kancheepuram, Dept ECE, Chennai 600127, Tamil Nadu, India

来源：

2021 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS) | 2021年

关键词：

FDSOI; g(m); HZO; LK model; MFMIS; NCFET; SS; NEGATIVE-CAPACITANCE;

D O I：

10.1109/EuroSOI-ULIS53016.2021.9560179

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, the temperature effect on Zirconium doped HfO2 (HZO) based Metal-Ferroelectric-MetalInsulator-Semiconductor (MFMIS) type Fully depleted Silicon on Insulator (FDSOI) negative capacitance field effect transistor (NCFET) has been investigated in ATLAS TCAD. The MIS device simulation has been performed in TCAD and its gate charge (Q(G)) has been extracted. The extracted charge is further utilized in 1D Landau-Khalatnikov (LK) model to find the voltage across ferro-electric (V-FE), that subsequently used to add the effect of HZO analytically to the device. Performance parameters like minimum sub-threshold swing (min. SS), off current (I-off) and transconductance (g(m)) with variation of temperature (280 K - 340 K with step 20 K) have been predicted. The performance variation of device with temperature has been explained using 1D LK theory.

引用

页数：4

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