Reduced sheet resistance in pentacene field-effect transistors using thiol-modified electrodes

被引：0

作者：

Pham, D. V. ^{[1
]}

Gravenstein, Y. ^{[1
]}

Bock, C. ^{[1
]}

Kunze, U. ^{[1
]}

Kaefer, D. ^{[2
]}

Witte, G. ^{[2
]}

Woell, Ch. ^{[2
]}

机构：

[1] Ruhr Univ Bochum, D-44780 Bochum, Germany

[2] Ruhr Univ Bochum, Phys Chem I, D-44780 Bochum, Germany

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷

关键词：

organic field-effect transistor; sheet resistance; parasitic resistance;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An anthracene-2-thiol treatment of the electrodes in bottom-contact pentacene field-effect transistors is used to improve the performance of organic transistors. Transistors with different channel lengths are prepared in order to separate the sheet resistance from the parasitic series resistance of the contacts and leads. The treatment results in a reduced sheet resistance of more than one order of magnitude whereas the parasistic resistance is nearly unaffected.

引用

页码：363 / +

页数：2

共 50 条

[31] Fabrication and Characteristics of Pentacene/Vanadium Pentoxide Field-Effect Transistors
Minagawa, M.
Nakai, K.
Baba, A.
Shinbo, K.
Kato, K.
Kaneko, F.
Lee, C.
PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
[32] Effects of gold nanoparticles on pentacene organic field-effect transistors
Lee, Keanchuan
Weis, Martin
Ou-Yang, Wei
Taguchi, Dai
Manaka, Takaaki
Iwamoto, Mitsumasa
Japanese Journal of Applied Physics, 2011, 50 (4 PART 1):
[33] Hole trap related hysteresis in pentacene field-effect transistors
Ucurum, C.
Goebel, H.
Yildirim, F. A.
Bauhofer, W.
Krautschneider, W.
JOURNAL OF APPLIED PHYSICS, 2008, 104 (08)
[34] Modeling of threshold voltage in pentacene organic field-effect transistors
Ou-Yang, Wei
Weis, Martin
Taguchi, Dai
Chen, Xiangyu
Manaka, Takaaki
Iwamoto, Mitsumasa
JOURNAL OF APPLIED PHYSICS, 2010, 107 (12)
[35] Styrenic polymers as gate dielectrics for pentacene field-effect transistors
Nunes, G
Zane, SG
Meth, JS
JOURNAL OF APPLIED PHYSICS, 2005, 98 (10)
[36] Styrenic polymers as gate dielectrics for pentacene field-effect transistors
Nunes Jr., G.
Zane, S.G.
Meth, J.S.
Journal of Applied Physics, 2005, 98 (10):
[37] Effects of Gold Nanoparticles on Pentacene Organic Field-Effect Transistors
Lee, Keanchuan
Weis, Martin
Wei Ou-Yang
Taguchi, Dai
Manaka, Takaaki
Iwamoto, Mitsumasa
JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (04)
[38] Effect of impurities on pentacene thin film growth for field-effect transistors
Gomar-Nadal, Elba
Conrad, Brad R.
Cullen, William G.
Willams, Ellen A.
JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (14): : 5646 - 5650
[39] A study of the threshold voltage in pentacene organic field-effect transistors
Schroeder, R
Majewski, LA
Grell, M
APPLIED PHYSICS LETTERS, 2003, 83 (15) : 3201 - 3203
[40] Hole trap related hysteresis in pentacene field-effect transistors
Ucurum, C.
Goebel, H.
Yildirim, F.A.
Bauhofer, W.
Krautschneider, W.
Journal of Applied Physics, 2008, 104 (08):

← 1 2 3 4 5 →