Styrenic polymers as gate dielectrics for pentacene field-effect transistors

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作者：
Nunes Jr., G. [1 ]
Zane, S.G. [1 ]
Meth, J.S. [1 ]
机构：
[1] DuPont Central Research and Development, Experimental Station, Wilmington, DE 19880, United States
来源：
Journal of Applied Physics | 2005年 / 98卷 / 10期
关键词：
Number:; 70NAN2H3032; Acronym:; NIST; Sponsor: National Institute of Standards and Technology;
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