Reduction of current collapse in AlGaN/GaN HFETs using AIN interfacial layer

被引：15
|
作者：
Lee, JS
Kim, JW
Lee, JH
Kim, CS
Oh, JE
Shin, MW
Lee, JH
机构：
[1] LG Elect Inst Technol, Adv Devices Grp, Seoul 137724, South Korea
[2] Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Daegue 702201, South Korea
[3] Hanyang Univ, Sch Elect & Comp Engn, Ansan 425791, Kyunggi Do, South Korea
[4] Myongji Univ, Dept Ceram Engn, Yongin Si 449728, Kyunggi Do, South Korea
来源：
ELECTRONICS LETTERS | 2003年 / 39卷 / 09期
关键词：
D O I：
10.1049/el:20030473
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Modified AlGaN/AlN/GaN HFET structures were grown and the current collapse phenomena were examined. Pulsed I-V measurements showed that the insertion of the thin AlN interfacial layer was effective in preventing the electrons in the 2DEG channel from being transferred to the surface and bulk traps in the AlGaN barrier layer.
引用
收藏
页码：750 / 752
页数：3
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