Vb/Ron improvement and current collapse suppression for high power AlGaN/GaN HFETs on Si substrates

被引：1

作者：

Ikeda, Nariaki ^{[1
]}

Kaya, Shusuke ^{[1
]}

Kokawa, Takuya ^{[1
]}

Kato, Sadahiro ^{[1
]}

机构：

[1] Adv Power Device Res Assoc, Nishi Ku, Yokohama, Kanagawa 2200073, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 | 2011年 / 8卷 / 7-8期

关键词：

AlGaN/GaN; HFETs; current collapse; Si substrate; high power device; VOLTAGE; RESISTANCE; OPERATION;

D O I：

10.1002/pssc.201000944

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, GaN-based HFET devices on 4-inch Si substrates were fabricated, and the device characteristics were examined. In order to improve a trade-off between the specific on-resistance (RonA) and the breakdown voltage (Vb), a combination of a thin uid (Un-Intentional Doped)-GaN layer and a thick carbon doped GaN layer as a back-barrier layer, resulting in an improvement of V-b without degrading on-state characteristics or current collapse. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2404 / 2406

页数：3

共 50 条

[1] Power AlGaN/GaN HFETs with excellent Vb/Ron for high speed switching
Ikeda, Nariaki
Kato, Kazuo
Li, Jiang
Kaya, Syusuke
Nomura, Takehiko
Masuda, Mitsuru
Yoshida, Seikoh
[J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 1920 - 1922
[2] High power AlGaN/GaN HFETs on 4 inch Si substrates
Ikeda, Nariaki
Kaya, Syuusuke
Li, Jiang
Sato, Yoshihiro
Kokawa, Takuya
Kato, Sadahiro
[J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, 6 : S933 - S936
[3] Suppression of Current Collapse of High-Voltage AlGaN/GaN HFETs on Si Substrates by Utilizing a Graded Field-Plate Structure
Deguchi, Tadayoshi
Tomita, Hideshi
Kamada, Atsushi
Arai, Manabu
Yamasaki, Kimiyoshi
Egawa, Takashi
[J]. IEICE TRANSACTIONS ON ELECTRONICS, 2012, E95C (08) : 1343 - 1347
[4] High-power AlGaN/GaN HFETs on Si substrates for power-switching applications
Ikeda, Nariaki
Lee, Jiang
Kaya, Syuusuke
Iwami, Masayuki
Nomura, Takehiko
Katoh, Sadahiro
[J]. GALLIUM NITRIDE MATERIALS AND DEVICES IV, 2009, 7216
[5] Novel high power AlGaN/GaN HFETs on SiC substrates
Gaska, R
Yang, J
Osinsky, A
AsifKhan, M
Shur, MS
[J]. INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, : 565 - 568
[6] Reduction of surface-induced current collapse in AlGaN/GaN HFETs on freestanding GaN substrates
Irokawa, Y
Luo, B
Ren, F
Gila, BP
Abernathy, CR
Pearton, SJ
Pan, CC
Chen, GT
Chyi, JI
Park, SS
Park, YJ
[J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2004, 7 (09) : G188 - G191
[7] AlGaN/GaN HFETs on Si substrates for WiMAX applications
Therrien, R.
Singhal, S.
Chaudhari, A.
Nagy, W.
Marquart, J.
Johnson, J. W.
Hanson, A. W.
Riddle, J.
Rajagopal, P.
Preskenis, B.
Zhitova, O.
Willamson, J.
Kizilyalli, I. C.
Linthicum, K. J.
[J]. 2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5, 2006, : 710 - 713
[8] High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse
Ikeda, Nariaki
Kaya, Syuusuke
Li, Jiang
Sato, Yoshihiro
Kato, Sadahiro
Yoshida, Seikoh
[J]. ISPSD 08: PROCEEDINGS OF THE 20TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2008, : 287 - 290
[9] High-power AlGaN/GaN MIS-HFETs with field-plates on Si substrates
Ikeda, Nariaki
Kaya, Shusuke
Li, Jiang
Kokawa, Takuya
Masuda, Mitsuru
Katoh, Sadahiro
[J]. 2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2009, : 251 - 254
[10] Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs
Uren, Michael J.
Moereke, Janina
Kuball, Martin
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (12) : 3327 - 3333

← 1 2 3 4 5 →