Structural studies of epitaxial BaTiO3 thin film on silicon

被引：11
|
作者：
Wague, B. [1 ]
Brubach, J. -B. [2 ]
Niu, G. [3 ,4 ]
Dong, G. [3 ,4 ]
Dai, L. [3 ,4 ]
Roy, P. [2 ]
Saint-Girons, G. [1 ]
Rojo-Romeo, P. [1 ]
Robach, Y. [1 ]
Vilquin, B. [1 ]
机构：
[1] Univ Lyon, Ecole Cent Lyon, Inst Nanotechnol Lyon, CNRS UMR5270, 36 Ave Guy Collongue, F-69134 Ecully, France
[2] Synchrotron SOLEIL, AILES Beamline, F-91190 St Aubin, France
[3] Xi An Jiao Tong Univ, Minist Educ, Key Lab, Elect Mat Res Lab, Xian 710049, Shaanxi, Peoples R China
[4] Xi An Jiao Tong Univ, Int Ctr Dielect Res, Xian 710049, Shaanxi, Peoples R China
来源：
THIN SOLID FILMS | 2020年 / 693卷
关键词：
Ferroelectricity; Thin films; Silicon; Epitaxy; Radio-frequency magnetron sputtering; Infrared spectroscopy; Phonon; TEMPERATURE-DEPENDENCE; FERROELECTRIC BATIO3; RAMAN-SPECTROSCOPY; INFRARED BEAMLINE; SINGLE-CRYSTAL; SRTIO3; POLARIZATION;
D O I：
10.1016/j.tsf.2019.137636
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
BaTiO3 thin films (60 nm-thick) grown on SrTiO3/Si templates have been characterized for their structural and electrical properties. The epitaxy of the BaTiO3 film on silicon was confirmed by X-ray diffraction with good crystallinity. The temperature-dependent structural properties were checked by infrared spectroscopy in absorption mode. The films were found to remain in a single ferroelectric phase over a temperature range from 5 to 385 K. Low-temperature orthorhombic-rhombohedral phase transitions characteristic of bulk BaTiO3 are absent in the films due to the clamping effect from the Si substrate.
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页数：5
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