Preparation of semiconductive epitaxial BaTiO3 thin film and its electrical properties

被引：6
|
作者：
Hioki, T
Funakubo, H
Sakurai, O
Shinozaki, K
Mizutani, N
机构：
[1] Department of Inorganic Materials, Faculty of Engineering, Tokyo Institute of Technology, Megro-ku, Tokyo 152, 2-12-1, O-okayama
来源：
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 1996年 / 104卷 / 01期
关键词：
semiconductive; BaTiO3; electrical property; MOCVD; epitaxial;
D O I：
10.2109/jcersj.104.75
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Submicron semiconductive epitaxial BaTiO3 thin film was prepared on (100) MgO substrate. An epitaxially grown BaTiO3 him prepared by MOCVD was coated with ethanol solution of LaCl3 and heated under a reducing atmosphere at 800-1200 degrees C. The resistivity was less than 1 Omega . cm and the carrier concentration was in the order of 10(18) cm(-3). The film was n-type semiconductor and the resistivity increased abruptly with the increase in temperature above 600 degrees C in air because of the decrease of the carrier concentration.
引用
收藏
页码：75 / 77
页数：3
相关论文
共 50 条
  • [1] Modification of semiconductive BaTiO3 film and its electrical properties
    Funakubo, H
    Hioki, T
    Sakurai, O
    Shinozaki, K
    Mizutani, N
    MATERIALS RESEARCH BULLETIN, 1996, 31 (10) : 1233 - 1241
  • [2] Electrical transport properties of epitaxial BaTiO3 thin films
    Gilbert, SR
    Wills, LA
    Wessels, BW
    Schindler, JL
    Thomas, JA
    Kannewurf, CR
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (02) : 969 - 977
  • [3] Electrical transport properties of epitaxial BaTiO3 thin films
    J Appl Phys, 2 (969):
  • [4] Nonlinear piezoelectric properties of epitaxial BaTiO3 thin film
    Negulescu, B.
    Daumont, C. J. M.
    Sakai, J.
    Ruyter, A.
    Bavencoffe, M.
    Alyabyeva, N.
    Wolfman, J.
    FERROELECTRICS, 2017, 514 (01) : 9 - 18
  • [5] Electrical properties and crystal structures of semiconductive Nb-doped BaTiO3 thin film prepared by MOCVD
    Nagano, D
    Funakubo, H
    Sakurai, O
    Saiki, A
    Shinozaki, K
    Mizutani, N
    ELECTROCERAMICS IN JAPAN I, 1999, 157-1 : 167 - 173
  • [6] Effect of Stress Engineering on the Electrical Properties of BaTiO3 Thin Film
    Fukamachi, Kohei
    Sakamoto, Naonori
    Ohno, Tomoya
    Fu, Desheng
    Wakiya, Naoki
    Matsuda, Takeshi
    Suzuki, Hisao
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (09)
  • [7] Effect of yttrium content on the PTCR characteristics of BaTiO3 semiconductive thin film
    Shen, L.
    Qu, F.Q.
    Song, S.G.
    Gongneng Cailiao/Journal of Functional Materials, 2001, 32 (01): : 53 - 54
  • [8] Structural studies of epitaxial BaTiO3 thin film on silicon
    Wague, B.
    Brubach, J. -B.
    Niu, G.
    Dong, G.
    Dai, L.
    Roy, P.
    Saint-Girons, G.
    Rojo-Romeo, P.
    Robach, Y.
    Vilquin, B.
    THIN SOLID FILMS, 2020, 693
  • [9] Dielectric properties of epitaxial BaTiO3 thin films
    Hoerman, BH
    Ford, GM
    Kaufmann, LD
    Wessels, BW
    APPLIED PHYSICS LETTERS, 1998, 73 (16) : 2248 - 2250
  • [10] Preparation and electrical properties of nanoporous BaTiO3
    Ji, Botao
    Chen, Dairong
    Jiao, Xiuling
    Zhao, Zhongqiang
    Jiao, Yingxun
    MATERIALS LETTERS, 2010, 64 (16) : 1836 - 1838
12345