ENHANCED MAXIMUM MODAL GAIN OF 1.3-μm ANTIMONY MEDIATED InAs SELF-ASSEMBLED QUANTUM-DOT LASERS

被引：1
|
作者：
Ishida, M. [1 ,2 ]
Watanabe, K. [1 ,2 ]
Kumagai, N. [1 ,2 ]
Nakata, Y. [1 ,2 ]
Hatori, N. [1 ,2 ]
Sudo, H. [3 ]
Yamamoto, T. [3 ]
Sugawara, M. [3 ,4 ]
Arakawa, Y. [1 ,2 ]
机构：
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, 4-6-1 Komaba, Tokyo 1538094, Japan
[2] Univ Tokyo, NCRC, IIS RCAST, Meguro Ku, 4-6-1 Komaba, Tokyo 1538094, Japan
[3] Fulitsu Lab Ltd, Tokyo, Japan
[4] QD Laser Inc, Chiyoda ku, Tokyo, Japan
来源：
2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2007年
关键词：
D O I：
10.1109/ICIPRM.2007.381251
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Gain characteristics of antimony-mediated high-density InAs quantum-dot lasers were evaluated. For the lasers with 5 and 10 quantum dot layers, 88% and 39% increase in the maximum modal gain, respectively, was obtained compared with that of conventional InAs quantum dots.
引用
收藏
页码：555 / 558
页数：4
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