Optical Properties of Self-assembled InAs Quantum-dot Superluminescent Diodes

被引：1

作者：

Jung, Soon Il ^{[2
]}

Yun, Ilgu ^{[2
]}

Lee, Joo In ^{[1
]}

Han, Il Ki ^{[3
]}

机构：

[1] Korea Res Inst Stand & Sci, Adv Ind Metrol Grp, Taejon 305340, South Korea

[2] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea

[3] Korea Inst Sci & Technol, Nano Devices Res Ctr, Seoul 136791, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2009年 / 55卷 / 01期

关键词：

Quantum dot; Superluminescent diode; Photoluminescence; Electroluminescence; BIMODAL SIZE-DISTRIBUTION; ACTIVE-REGION; WAVE-GUIDE; LASER; SPECTRUM;

D O I：

10.3938/jkps.55.24

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report broad-band superluminescent diodes (SLDs) with different active layers using a self-assembled InAs quantum-dot (QD) structure grown by using atomic layer molecular beam epitaxy. The photoluminescence and the electroluminescence measurements show a relationship between the emission properties and different activelayer structures of the QD-SLD These results explain the possibility of QD-based SLDs exceeding the performance of quantumwell-based SLDs.

引用

页码：24 / 27

页数：4

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