InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth

被引：28
|
作者：
Liu, N [1 ]
Jin, P [1 ]
Wang, ZG [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
ELECTRONICS LETTERS | 2005年 / 41卷 / 25期
关键词：
D O I：
10.1049/el:20053822
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Broadband superluminescent diodes are fabricated by using InAs/GaAs self-assembled quantum dots as an active region. The devices exhibited properties of 110 run bandwidth with the centre of 1.1 mu m and above 30 mW output under pulse injection at room temperature.
引用
收藏
页码：1400 / 1402
页数：3
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