InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration

被引：0
|
作者：
李新坤 [1 ]
金鹏 [1 ]
梁德春 [1 ]
吴巨 [1 ]
王占国 [1 ]
机构：
[1] Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences
来源：
Chinese Physics B | 2013年 / 04期
基金：
中国国家自然科学基金;
关键词：
quantum dot; submonolayer; self-assembled; superluminescent diode;
D O I：
暂无
中图分类号：
TN312.8 [];
学科分类号：
0803 ;
摘要：
With a chirped InAs/GaAs SML-QD (quantum dot) structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970nm are fabricated. By using an active multimode interferometer configuration, these devices exhibit high continue-wave output powers from the narrow ridge waveguides. At continue-wave injection current of 800mA, an output power of 18.5mW, and the single Gaussian-like emission spectrum centered at 972nm with a full width at half maximum of 18nm are obtained.
引用
收藏
页码：523 / 526
页数：4
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