Magnetic frustration effect in polycrystalline Ga2-xFexO3

被引:28
|
作者
Wang, N. [1 ]
Wen, F. S. [1 ]
Li, L. [1 ]
Lue, Y. F. [1 ]
Liu, S. C. [1 ]
Lu, Y. F. [2 ]
Liu, Z. Y. [1 ]
Xu, B. [1 ]
He, J. L. [1 ]
Yu, D. L. [1 ]
Tian, Y. J. [1 ]
机构
[1] Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China
[2] NW Inst Nonferrous Met Res, Xian 710016, Peoples R China
关键词
Frustration; Magnetic susceptibility; Multiferroic; Gallium compound; GALLIUM IRON-OXIDE; CRYSTAL;
D O I
10.1016/j.jmmm.2010.07.018
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In Ga2-xFexO3 with the Pc2(1)n orthorhombic structure, owing to the site disorder of Fe ions on the four nonequivalent sites of Fe1, Fe2, Ga1, and Ga2, there exists a significant amount of non-effective Fe ions with no contribution to the ferrimagnetic ordering. These non-effective Fe ions have been found to induce strong frequency dependent suppression of the peak height in the ac susceptibility, demonstrating the frustration effect in the ferrimagnetic ordering background. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:3595 / 3600
页数:6
相关论文
共 50 条
  • [21] First principles study of the spontaneous electric polarization in Ga2-xFexO3
    Stoeffler, Daniel
    THIN SOLID FILMS, 2013, 533 : 93 - 96
  • [22] BOND LENGTHS IN ALPHA-GA2O3 STRUCTURE AND HIGH-PRESSURE PHASE OF GA2-XFEXO3
    MAREZIO, M
    REMEIKA, JP
    JOURNAL OF CHEMICAL PHYSICS, 1967, 46 (05): : 1862 - &
  • [23] On the Neel temperature and magnetic domain wall movements of Ga2-xFexO3 single crystals grown by floating-zone technique
    Srimathy, B.
    Bhaumik, Indranil
    Ganesamoorthy, S.
    Bhatt, R.
    Karnal, A. K.
    Kumar, J.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 590 : 459 - 464
  • [24] Structural and magnetoelectric properties of Ga2-xFexO3 single crystals grown by a floating-zone method
    Arima, T
    Higashiyama, D
    Kaneko, Y
    He, JP
    Goto, T
    Miyasaka, S
    Kimura, T
    Oikawa, K
    Kamiyama, T
    Kumai, R
    Tokura, Y
    PHYSICAL REVIEW B, 2004, 70 (06) : 064426 - 1
  • [25] Correlation between Structure, Chemistry, and Dielectric Properties of Iron-Doped Gallium Oxide (Ga2-xFexO3)
    Roy, Swadipta
    Mallesham, B.
    Zade, Vishal B.
    Martinez, Abraham
    Shutthanandan, V
    Thevuthasan, S.
    Ramana, C., V
    JOURNAL OF PHYSICAL CHEMISTRY C, 2018, 122 (48): : 27597 - 27607
  • [26] ABSORPTION SPECTRUM OF FE3+ ION IN PBFE0.5NB0.5O3 AND IN GA2-XFEXO3
    PISAREV, RV
    SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (01): : 158 - +
  • [27] Ga2-xFexO3单相多铁性及室温磁电耦合效应的研究进展
    张军
    马建春
    薛武红
    中国陶瓷, 2024, 60 (03) : 1 - 11
  • [28] Determination of the cationic distribution in oxidic thin films by resonant X-ray diffraction: the magnetoelectric compound Ga2-xFexO3
    Lefevre, Christophe
    Thomasson, Alexandre
    Roulland, Francois
    Favre-Nicolin, Vincent
    Joly, Yves
    Wakabayashi, Yusuke
    Versini, Gilles
    Barre, Sophie
    Leuvrey, Cedric
    Demchenko, Anna
    Boudet, Nathalie
    Viart, Nathalie
    JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2016, 49 : 1308 - 1314
  • [29] Investigations on the effect of magnetic ordering on dielectric relaxation in polycrystalline GdMn1-xFexO3
    Pal, A.
    Murugavel, P.
    PHYSICA B-CONDENSED MATTER, 2019, 555 : 99 - 105