On the Neel temperature and magnetic domain wall movements of Ga2-xFexO3 single crystals grown by floating-zone technique

被引:10
|
作者
Srimathy, B. [1 ]
Bhaumik, Indranil [2 ]
Ganesamoorthy, S. [3 ]
Bhatt, R. [2 ]
Karnal, A. K. [2 ]
Kumar, J. [1 ]
机构
[1] Anna Univ, Ctr Crystal Growth, Madras, Tamil Nadu, India
[2] Raja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore, Madhya Pradesh, India
[3] IGCAR, Mat Sci Grp, Xray Scattering & Crystal Growth Sect, Madras, Tamil Nadu, India
关键词
Crystal growth; Dielectric response; Magnetization; Magnetic measurements; X-ray diffraction; GALLIUM; MULTIFERROICS; MOSSBAUER; GAFEO3;
D O I
10.1016/j.jallcom.2013.12.159
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Single crystals of piezoelectric ferrimagnet, Gallium ferrite Ga-2 xFexO3 ( x = 0.8, 1.0 and 1.2) were grown by optical floating zone technique. Phase confirmation was done by X-ray diffraction and the lattice parameters were determined via Rietveld refinement which shows a linear variation. Composition of the grown crystals was confirmed by energy dispersive X-ray spectra. Temperature and frequency dependent dielectric spectra have been used to explain the conduction mechanism in Ga2-xFexO3 single crystals. Dielectric constant of 1610 was obtained for GaFeO3 (x = 1) and increases with x. With increasing iron concentration, a linear increase in T-N is observed and the crystals transform as softer magnets. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:459 / 464
页数:6
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