Preparation and Thermoelectric Properties of Bi-Doped Mg2Si0.8Sn0.2 Compound

被引：25
|
作者：
Luo, Weijun [1 ]
Yang, Meijun [1 ]
Chen, Fei [1 ]
Shen, Qiang [1 ]
Jiang, Hongyi [1 ]
Zhang, Lianmeng [1 ]
机构：
[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
来源：
MATERIALS TRANSACTIONS | 2010年 / 51卷 / 02期
关键词：
Bi-doped Mg2Si0.8Sn0.2; solid state reaction (SSR)-spark plasma sintering (SPS); thermoelectric properties;
D O I：
10.2320/matertrans.MC200908
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The Bi-doped Mg2Si0.8Sn0.2 single phase compound is prepared by a solid state reaction (SSR)-spark plasma sintering (SPS) method. The effect of the Bi content on the thermoelectric properties of the Bi-doped Mg2Si0.8Sn0.2 compound is mainly investigated. The results show that the thermoelectric properties of the obtained samples are sensitive to the Bi content. With the increase in Bi content, the electrical conductivity (sigma) and Seebeck coefficient (alpha) of the samples are increased, while the thermal conductivity (kappa) is decreased slightly between 300K and 850 K. When the Bi content is greater than 3.0 at%, the sample shows a maximum figure of merit (ZT) value (1.17 +/- 0.05) at 850 K. [doi:10.2320/matertrans.MC200908]
引用
收藏
页码：288 / 291
页数：4
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