Preparation and Thermoelectric Properties of Bi-Doped Mg2Si0.8Sn0.2 Compound

被引：25
|
作者：
Luo, Weijun [1 ]
Yang, Meijun [1 ]
Chen, Fei [1 ]
Shen, Qiang [1 ]
Jiang, Hongyi [1 ]
Zhang, Lianmeng [1 ]
机构：
[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
来源：
MATERIALS TRANSACTIONS | 2010年 / 51卷 / 02期
关键词：
Bi-doped Mg2Si0.8Sn0.2; solid state reaction (SSR)-spark plasma sintering (SPS); thermoelectric properties;
D O I：
10.2320/matertrans.MC200908
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The Bi-doped Mg2Si0.8Sn0.2 single phase compound is prepared by a solid state reaction (SSR)-spark plasma sintering (SPS) method. The effect of the Bi content on the thermoelectric properties of the Bi-doped Mg2Si0.8Sn0.2 compound is mainly investigated. The results show that the thermoelectric properties of the obtained samples are sensitive to the Bi content. With the increase in Bi content, the electrical conductivity (sigma) and Seebeck coefficient (alpha) of the samples are increased, while the thermal conductivity (kappa) is decreased slightly between 300K and 850 K. When the Bi content is greater than 3.0 at%, the sample shows a maximum figure of merit (ZT) value (1.17 +/- 0.05) at 850 K. [doi:10.2320/matertrans.MC200908]
引用
收藏
页码：288 / 291
页数：4
相关论文
共 50 条
  • [21] Effect of nanocomposite structure on the thermoelectric properties of 0.7-at% Bi-doped Mg2Si nanocomposite
    Yang Mei-Jun
    Shen Qiang
    Zhang Lian-Meng
    CHINESE PHYSICS B, 2011, 20 (10)
  • [22] Investigation of Diffusion Barrier Layers for Bi-Doped Mg2(Si,Ge) Thermoelectric Legs
    Codrin Prahoveanu
    Laetitia Laversenne
    Cédric de Vaulx
    Alexandre Bès
    Kamel Azzouz
    Ana Lacoste
    Journal of Electronic Materials, 2016, 45 : 5570 - 5581
  • [23] Investigation of Diffusion Barrier Layers for Bi-Doped Mg2(Si,Ge) Thermoelectric Legs
    Prahoveanu, Codrin
    Laversenne, Laetitia
    de Vaulx, Cedric
    Bes, Alexandre
    Azzouz, Kamel
    Lacoste, Ana
    JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (11) : 5570 - 5581
  • [24] High Thermoelectric Performance of Bi-Doped Mg2Si0.4Sn0.6 and Mg2Si0.6Sn0.4 based on Recyclable Si Kerf Derived from PV Manufacturing
    Mangelis, Panagiotis
    Sousanis, Andreas
    Mesaritis, George
    Ioannou, Panagiotis S.
    Soiland, Anne-Karin
    Xu, Yijiang
    Kyratsi, Theodora
    ACS APPLIED ELECTRONIC MATERIALS, 2024, 6 (05) : 2988 - 2998
  • [25] Thermoelectric properties of Bi-doped PbTe composites
    Popescu, A.
    Datta, A.
    Nolas, G. S.
    Woods, L. M.
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (10)
  • [26] Solid state reaction synthesis and thermoelectric properties of Ag-doped Mg2Si0.8Ge0.2
    Liu, Q. Z.
    Zhang, L. M.
    Shen, Q.
    Jiang, H. Y.
    Wang, C. B.
    COMPOSITE MATERIALS IV, 2006, 313 : 177 - 182
  • [27] Thermoelectric Properties of n-Mg2(SiGe)0.8Sn0.2 Solid Solution
    G. N. Isachenko
    A. Yu. Samunin
    P. P. Konstantinov
    A. A. Kasyanov
    A. Masalimov
    Semiconductors, 2019, 53 : 607 - 610
  • [28] Reduced lattice thermal conductivity in Bi-doped Mg2Si0.4Sn0.6
    Gao, Peng
    Lu, Xu
    Berkun, Isil
    Schmidt, Robert D.
    Case, Eldon D.
    Hogan, Timothy P.
    APPLIED PHYSICS LETTERS, 2014, 105 (20)
  • [29] Thermoelectric Properties of n-Mg2(SiGe)0.8Sn0.2 Solid Solution
    Isachenko, G. N.
    Samunin, A. Yu.
    Konstantinov, P. P.
    Kasyanov, A. A.
    Masalimov, A.
    SEMICONDUCTORS, 2019, 53 (05) : 607 - 610
  • [30] Thermoelectric transport properties and structure of Mg2Si0.8Sn0.2prepared by ECAS under different current intensities
    Wen-Hao Fan
    Yuan-Yuan Jiao
    Rui-Xue Chen
    Di-Yang Wu
    Qing-Sen Meng
    Shao-Ping Chen
    Rare Metals, 2014, 33 (02) : 215 - 218
12345