Scanning tunneling microscope study of capped quantum dots

被引：2
|
作者：
Song, HZ
Kawabe, M
Okada, Y
Yoshizaki, R
Usuki, T
Nakata, Y
Ohshima, T
Yokoyama, N
机构：
[1] Fujitsu Labs Ltd, Nanotechnol Res Ctr, Kanagawa 2430197, Japan
[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
[3] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050047, Japan
[4] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
[5] Univ Tsukuba, Inst Mat Sci, Tsukuba, Ibaraki 3058573, Japan
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 12期
关键词：
D O I：
10.1063/1.1791340
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
On thinly capped InGaAs/GaAs quantum dots (QDs), a simultaneous study of both the microscopic and electronic structures was carried out using scanning tunneling microscopy (STM). Although the surface is morphologically flat, the STM image of the embedded QDs can be clearly observed at cryogenic temperatures and is distinguishable up to room temperature. Such images are available in a particular bias range, which corresponds to the occurrence of QD-associated current, as demonstrated in scanning tunneling spectroscopy. (C) 2004 American Institute of Physics.
引用
收藏
页码：2355 / 2357
页数：3
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