Thermoelectric properties of and device physics based on InSb semiconductors

被引：0
|
作者：
Yamazaki, J. [1 ]
Katsumata, J. [1 ]
Kaiwa, N. [1 ]
Yamaguchi, S. [1 ]
Yamamoto, A. [1 ]
机构：
[1] Kanagawa Univ, Dept Elect Elect & Informat Engn, Kanagawa Univ, 3-27-1 Rokkakubashi, Yokohama, Kanagawa 2218686, Japan
来源：
PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷
关键词：
InSb; thermoelectric;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The thermoelectric properties of InSb were studied. A miniaturized InSb-based thermoelectric device was designed and fabricated. Maximum of output voltage and output power were 6.1mV and 2 mu W, respectively, at Delta T=100K.
引用
收藏
页码：1387 / +
页数：2
相关论文
共 50 条
  • [31] Controlled doping of molecular organic semiconductors:: Physics and device applications
    Pfeiffer, M
    Blochwitz, J
    Nollau, A
    Plönnigs, B
    Zhou, X
    Leo, K
    [J]. PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 1621 - 1622
  • [32] DEVICE FOR MEASURING SURFACE PROPERTIES OF SEMICONDUCTORS
    KARPOVIC.IA
    GIRAEV, MA
    [J]. INSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR, 1965, (02): : 414 - &
  • [33] Thermoelectric transport properties of high mobility organic semiconductors
    Venkateshvaran, Deepak
    Broch, Katharina
    Warwick, Chris N.
    Sirringhaus, Henning
    [J]. ORGANIC FIELD-EFFECT TRANSISTORS XV, 2016, 9943
  • [34] METHODS FOR INVESTIGATING THERMOELECTRIC PROPERTIES OF LIQUID SEMICONDUCTORS (REVIEW)
    GLAZOV, VM
    EVSEEV, VA
    PAVLOV, VG
    [J]. INDUSTRIAL LABORATORY, 1966, 32 (03): : 355 - &
  • [35] Effect of interband scattering on the thermoelectric properties of semiconductors and semimetals
    Pshenay-Severin, D. A.
    Fedorov, M. I.
    [J]. PHYSICS OF THE SOLID STATE, 2010, 52 (07) : 1342 - 1347
  • [36] Specialized Hardware and Software for The Study of Thermoelectric Properties of Semiconductors
    Dunets, Roman
    Dzundza, Bogdan
    Kostyuk, Oksana
    [J]. 15TH INTERNATIONAL CONFERENCE ON ADVANCED TRENDS IN RADIOELECTRONICS, TELECOMMUNICATIONS AND COMPUTER ENGINEERING (TCSET - 2020), 2020, : 146 - 151
  • [37] Thermoelectric properties of group VI metal silicide semiconductors
    Nonomura, T.
    Wen, C.
    Kato, A.
    Isobe, K.
    Kubota, Y.
    Nakamura, T.
    Yamashita, M.
    Hayakawa, Y.
    Tatsuoka, H.
    [J]. ASIA-PACIFIC CONFERENCE ON SEMICONDUCTING SILICIDES SCIENCE AND TECHNOLOGY TOWARDS SUSTAINABLE OPTOELECTRONICS (APAC-SILICIDE 2010), 2011, 11 : 110 - 113
  • [38] Effect of interband scattering on the thermoelectric properties of semiconductors and semimetals
    D. A. Pshenay-Severin
    M. I. Fedorov
    [J]. Physics of the Solid State, 2010, 52 : 1342 - 1347
  • [39] EFFECT OF DEFORMATION ON THE ENERGY SPECTRUM AND ELECTRICAL PROPERTIES OF SEMICONDUCTORS OF THE INSB TYPE
    BIR, GL
    PIKUS, GE
    [J]. SOVIET PHYSICS-SOLID STATE, 1962, 3 (10): : 2221 - 2233
  • [40] Microstructure and thermoelectric properties of InSb compound with nonsoluble NiSb in situ precipitates
    Guangyu Jiang
    Yi Chen
    Tiejun Zhu
    Xiaohua Liu
    Xinbing Zhao
    [J]. Journal of Materials Research, 2013, 28 : 3394 - 3400
12345