EFFECT OF DEFORMATION ON THE ENERGY SPECTRUM AND ELECTRICAL PROPERTIES OF SEMICONDUCTORS OF THE INSB TYPE

被引：0

作者：

BIR, GL

PIKUS, GE

机构：

来源：

SOVIET PHYSICS-SOLID STATE | 1962年 / 3卷 / 10期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2221 / 2233

页数：13

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[1] EFFECT OF DEFORMATION ON THE ENERGY SPECTRUM AND THE ELECTRICAL PROPERTIES OF IMPERFECT GERMANIUM AND SILICON
PIKUS, GE
BIR, GL
[J]. SOVIET PHYSICS-SOLID STATE, 1959, 1 (01): : 136 - 138
[2] EFFECT OF PRESSURE ON THE ELECTRICAL PROPERTIES OF INSB
LONG, D
MILLER, PH
[J]. PHYSICAL REVIEW, 1955, 98 (04): : 1192 - 1193
[3] ELECTRICAL PROPERTIES OF INSB
NASLEDOV, DN
KHALILOV, AI
[J]. SOVIET PHYSICS-TECHNICAL PHYSICS, 1956, 1 (01): : 3 - 10
[4] EFFECT OF AN IMPURITY ON ENERGY SPECTRUM OF ELECTRONS IN SEMICONDUCTORS
KASAMANY.ZA
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (12): : 1425 - &
[5] THE ENERGY SPECTRUM OF CURRENT CARRIERS IN SEMICONDUCTORS OF THE GERMANIUM TYPE
SAMOILOVICH, AG
TOVSTIUK, KD
[J]. SOVIET PHYSICS-TECHNICAL PHYSICS, 1957, 2 (08): : 1629 - 1638
[6] ELECTRICAL PROPERTIES OF P-TYPE INSB AT LOW TEMPERATURES
LIEN, C
NASLEDOV, DN
[J]. SOVIET PHYSICS-SOLID STATE, 1959, 1 (04): : 514 - 515
[7] ELECTRON SCATTERING IN INSB-TYPE SEMICONDUCTORS
KORENBLIT, LL
SHERSTOB.VE
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (05): : 564 - +
[8] ELECTRICAL PROPERTIES IN CUBIC SEMICONDUCTORS WITH SPHEROIDAL ENERGY SURFACES
SHIBUYA, M
[J]. PHYSICA, 1954, 20 (11): : 971 - 975
[9] UNIFORM PRESSURE EFFECT ON THE ENERGY-SPECTRUM OF ELECTRONS AND KINETIC-PROPERTIES OF SEMICONDUCTORS
DAUNOV, MI
MAGOMEDOV, AB
RAMAZANOVA, AE
[J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1986, 29 (08): : 98 - 111
[10] ELECTRICAL PROPERTIES OF AMORPHOUS INSB
HAUSER, JJ
[J]. PHYSICAL REVIEW B, 1973, 8 (06) : 2678 - 2684

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