New approaches in the transient thermal measurements

被引：28
|
作者：
Székely, V
Ress, S
Poppe, A
Török, S
Magyari, D
Benedek, Z
Torki, K
Courtois, B
Rencz, M
机构：
[1] Tech Univ Budapest, Dept Electron Devices, H-1521 Budapest, Hungary
[2] TIMA Lab, F-38031 Grenoble, France
[3] MicReD Ltd, H-1112 Budapest, Hungary
来源：
MICROELECTRONICS JOURNAL | 2000年 / 31卷 / 9-10期
基金：
匈牙利科学研究基金会;
关键词：
thermal transient testing; thermal transient tester; multi-port models; reduced order models;
D O I：
10.1016/S0026-2692(00)00051-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In the first part of the paper a thermal transient measurement approach is presented that can be applied for the generation of multi-port compact dynamic thermal models of IC packages. Experimental results prove the applicability of the ideas. In the second part of the paper the recent advances in the development of the appropriate measurement tools are described. Among others the authors present a new thermal transient test chip, and T3ster, a new thermal transient tester equipment, developed for high precision one-port or multi-port transient thermal measurements. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：727 / 733
页数：7
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