A Ka-Band Highly Linear Power Amplifier with a Linearization Bias Circuit

被引：7
|
作者：
Wang, Dehan [1 ]
Chen, Wenhua [1 ]
Chen, Long [1 ]
Liu, Xin [1 ]
Feng, Zhenghe [1 ]
机构：
[1] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China
来源：
2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2019年
基金：
国家重点研发计划;
关键词：
Power amplifier (PA); SiGe; 5G; mm-wave; linearization bias circuit; linearity;
D O I：
10.1109/mwsym.2019.8701069
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Ka-band highly linear power amplifier (PA) with a linearization bias circuit implemented in 0.25 um SiGe BiCMOS for 5G millimeter-wave (mm-wave) phased arrays is presented in this paper. The PA demonstrates a measured 12.5-dB small signal gain, 16.5-dBm saturated output power and 31.1% peak power added efficiency (PAE) at 27 GHz. At 27.5 GHz, the proposed PA is tested with an 800 MHz bandwidth 64-QAM signal without digital predistortion, which achieves a PAE of 18.55%, error vector magnitude (EVM) of -29.6dB, and adjacent channel leakage ratio (ACLR) of -30.05dBc at an average output power of 11.44dBm.
引用
收藏
页码：320 / 322
页数：3
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