The effect of fluorine in an advanced CMOS process with triple (1.6/2.2/5.2nm) nitrided gate oxide

被引：3
|
作者：
Hook, TB [1 ]
Kontra, R [1 ]
Burnham, J [1 ]
Lavoie, M [1 ]
机构：
[1] IBM Corp, Microelec, Essex Jct, VT 05452 USA
来源：
2003 8TH INTERNATIONAL SYMPOSIUM ON PLASMA- AND PROCESS-INDUCED DAMAGE | 2003年
关键词：
D O I：
10.1109/PPID.2003.1200945
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Fluorine is introduced into the pfet and nfet of a triple-oxide (1.6/2.2/5.2nm) 90nm nitrided-oxide CMOS technology. While the effects on the pfet gate oxide are relatively subtle, the nfet is very significantly affected. The effective thickness of the oxide increases by 0.5nm, much of the nitrogen is removed, and the structural integrity of the film is compromised. Electrical data, SIMS, TEM, and HRTEM analysis are used to characterize the films.
引用
收藏
页码：150 / 153
页数：4
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