Radiation Hardness of TiO2 Memristive Junctions

被引：60

作者：

Tong, William M. ^{[1
]}

Yang, J. Joshua ^{[1
]}

Kuekes, Philip J. ^{[1
]}

Stewart, Duncan R. ^{[1
]}

Williams, R. Stanley ^{[1
]}

DeIonno, Erica ^{[2
]}

King, Everett E. ^{[2
]}

Witczak, Steven C. ^{[2
]}

Looper, Mark D. ^{[2
]}

Osborn, Jon V. ^{[2
]}

机构：

[1] Hewlett Packard Labs, Informat & Quantum Syst Lab, Palo Alto, CA 94304 USA

[2] Aerosp Corp, El Segundo, CA 90245 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2010年 / 57卷 / 03期

关键词：

Memristor; non-volatie memory; rad-hard; titanium oxide; NANODEVICES;

D O I：

10.1109/TNS.2010.2045768

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Semiconducting TiO2 displays non-volatile multi-state, hysteretic behavior in its I-V characteristics that can be exploited as a memory material in a memristive device. We exposed memristive TiO2 devices in the on and off resistance states to 45 Mrad(Si) of similar to 1-MeV gamma radiation and 23 Mrad(Si) of 941-MeV Bi-ions under zero bias conditions and none of the devices were degraded. These results suggest that TiO2 memristive devices are good candidates for radiation hard electronics for aerospace.

引用

页码：1640 / 1643

页数：4

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