Optoelectronic properties of SnO2/TiO2 junctions

被引：12
|
作者：
Kunst, M [1 ]
Moehl, T [1 ]
Wünsch, F [1 ]
Tributsch, H [1 ]
机构：
[1] Hahn Meitner Inst Berlin GmbH, Bereich Solare Energet, D-14109 Berlin, Germany
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2006年 / 39卷 / 1-4期
关键词：
D O I：
10.1016/j.spmi.2005.08.062
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Transparent, conductive SnO2) (FTO) films and colloidal TiO2 films deposited on these FTO films are investigated by means of contactless transient photoconductance measurements in the microwave frequency range (TRMC measurements). For the bare FTO-glass films excitation with 355 nm light pulses leads to appreciable TRMC signals indicating the semiconductor properties of the material. For TiO2 films on FTO-glass films, injection of excess electrons from TiO2) into FTO is observed. (C) 2005 Published by Elsevier Ltd.
引用
收藏
页码：376 / 380
页数：5
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