An ultra wideband 0.04 to 40 GHz PIN diode transfer switch

被引：2

作者：

Sun, C ^{[1
]}

Magers, J ^{[1
]}

Oldfield, W ^{[1
]}

Simmons, R ^{[1
]}

Liu, E ^{[1
]}

机构：

[1] Calif Polytech State Univ San Luis Obispo, San Luis Obispo, CA 93407 USA

来源：

2002 3RD INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS | 2002年

关键词：

D O I：

10.1109/ICMMT.2002.1187897

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

0.04 to 40 GHz silicon PIN diode transfer switch has been demonstrated. The transfer switch included a PIN diode switch network and an output divider network. An insertion loss of about 12 dB at 40 GHz was achieved, and a minimum isolation of 90 dB was obtained over the entire frequency range. Computer modeling results were also presented.

引用

页码：1093 / 1096

页数：4

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