GaAs PIN Diode Based 220 GHz Switch Design Using Flip Chip Technique

被引：0
|
作者：
Hao, Xiaolin [1 ]
Zhang, Ao [2 ]
Gu, Guodong [1 ]
Liang, Shixiong [3 ]
Song, Xubo [1 ]
Zhang, Lisen [1 ]
Xu, Peng [1 ]
Gao, Jianjun [4 ]
Feng, Zhihong [1 ]
机构：
[1] Hebei Semicond Res Inst, Natl Key Lab Solid State Microwave Devices & Circu, Shijiazhuang 050051, Peoples R China
[2] Nantong Univ, Sch Microelect, Nantong 226019, Peoples R China
[3] Tianjin Univ, Sch Microelect, Tianjin 300072, Peoples R China
[4] East China Normal Univ, Sch Phys & Elect Sci, Shanghai 200241, Peoples R China
来源：
IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY | 2025年 / 15卷 / 01期
基金：
中国国家自然科学基金;
关键词：
PIN photodiodes; Switches; Gallium arsenide; Capacitance; Switching circuits; Circuits; Scattering parameters; Resistance; Pins; Insertion loss; Equivalent circuit model; GaAs PIN diode; parameter extraction; subterahertz switch; BAND SPDT SWITCH; TERAHERTZ;
D O I：
10.1109/TTHZ.2024.3481959
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaAs PIN diode based single-pole single-throw (SPST) and single-pole double-throw (SPDT) switches with low insertion loss have been designed and fabricated up to 220 GHz. The on-state and off-state small-signal models of GaAs PIN diodes have been developed, and the parameter extraction procedure is explained in more detail. GaAs PIN diodes have been mounted on the quartz substrate using the flip chip technique to achieve integrated subterahertz switches. The developed SPST switch has 3.2 dB insertion loss and 29 dB isolation in the frequency range of 220 to 230 GHz. The measurement of the SPDT switch reveals an isolation of >20 dB and an insertion loss of <3.3 dB in the frequency range of 213 to 225 GHz. This switch boasts the highest operating frequency reported based on GaAs PIN diodes.
引用
收藏
页码：100 / 106
页数：7
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